The effect of oxygen impurities on radiation hardness of FZ silicon detectors for HEP after neutron, proton and gamma irradiation
- 1 December 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 47 (6) , 1892-1897
- https://doi.org/10.1109/23.914465
Abstract
No abstract availableKeywords
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