Study of bulk damage in high resistivity silicon detectors irradiated by high dose of /sup 60/Co /spl gamma/-radiation
- 1 June 1997
- journal article
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 44 (3) , 834-839
- https://doi.org/10.1109/23.603761
Abstract
Displacement damage (or bulk damage) induced by high dose (>200 Mrad) gamma-radiation in high resistivity (6-10 k Omega-cm) silicon detectors has been studied. It has been found that detector bulk leakage current increases with gamma dose at a rate of 3.3x10(-7) A/cm(3)/Mrad. This damage rate of bulk leakage current originates from the introduction of generation centers and at a dose of 210 Mrad of gamma-radiation is comparable to that induced by 1x10(12) n/cm(2) of neutron radiation. Nearly 100% donor removal and/or compensation was found in detectors irradiated to 215 Mrad. Space charge sign inversion (SCSI) was observed in detectors irradiated to greater than or equal to 215 Mrad using transient current technique (TCT). As many as six deep levels have been observed by current deep level transient spectroscopy (I-DLTS). There was insignificant annealing and no reverse annealing even after elevated temperature treatment for detectors irradiated to 215 Mrad. A small amount of reverse annealing (10 to 15%) has been observed during the room temperature storage period of about 11 months for detectors irradiated to 500 Mrad.Keywords
This publication has 13 references indexed in Scilit:
- Investigation on the Neff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradationsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1996
- Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7/spl times/10/sup 15/ n/cm/sup 2/IEEE Transactions on Nuclear Science, 1996
- Defect evolution in irradiated silicon detector materialNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1996
- Development of current-based microscopic defect analysis methods and associated optical filling techniques for the investigation on highly irradiated high resistivity silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1995
- Experimental comparisons among various models for the reverse annealing of the effective concentration of ionized space charges (N/sub eff/) of neutron irradiated silicon detectorsIEEE Transactions on Nuclear Science, 1995
- Study of the long term stability of the effective concentration of ionized space charges (N/sub eff/) of neutron irradiated silicon detectors fabricated by various thermal oxidation processesIEEE Transactions on Nuclear Science, 1995
- Studies of deep levels in high resistivity silicon detectors irradiated by high fluence fast neutrons using a thermally stimulated current spectrometerIEEE Transactions on Nuclear Science, 1994
- Characterization of high fluence neutron induced defect levels in high resistivity silicon detectors using a laser deep level transient spectroscopy (L-DLTS)Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1994
- Modeling and simulation of neutron induced changes and temperature annealing of Neff and changes in resistivity in high resistivity silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1994
- Modeling and simulation of charge collection properties for neutron irradiated silicon detectorsNuclear Physics B - Proceedings Supplements, 1993