Studies of deep levels in high resistivity silicon detectors irradiated by high fluence fast neutrons using a thermally stimulated current spectrometer
- 1 August 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 41 (4) , 964-970
- https://doi.org/10.1109/23.322840
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- TSC data-analysis on heavily irradiated silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1995
- Using thermally stimulated currents to visualize defect clusters in neutron-irradiated siliconJournal of Applied Physics, 1992
- Thermally stimulated and leakage current analysis of neutron irriadated silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1991
- Deep-level transient spectroscopy measurements of majority carrier traps in neutron irradiated n-type silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1989
- Production of Radiation Defects by Collision Cascades in MetalsPublished by Elsevier ,1986
- Trapping center parameters in indium selenide single crystals by thermally stimulated current measurementsJournal of Applied Physics, 1983
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the DivacancyPhysical Review B, 1965
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-CenterPhysical Review B, 1964
- Angular Distributions of (α, n) Reaction son Be and CJournal of the Physics Society Japan, 1963
- Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-CenterPhysical Review B, 1961