Using thermally stimulated currents to visualize defect clusters in neutron-irradiated silicon
- 1 November 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (9) , 4007-4013
- https://doi.org/10.1063/1.352253
Abstract
Silicon p+n junctions irradiated with fast-neutron fluences (5×1011–5×1013 neutrons/cm2) have been experimentally measured using the thermally stimulated current technique. When forward filling voltages are applied, a new peak is found in samples irradiated with fluences greater than 5.6×1011. A cluster model has been developed to describe the new peak and the cluster’s dimensions and defect concentrations have been evaluated.This publication has 17 references indexed in Scilit:
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