Thermally stimulated and leakage current analysis of neutron irriadated silicon detectors
- 1 December 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 310 (1) , 273-276
- https://doi.org/10.1016/0168-9002(91)91042-t
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Fast neutron damage in silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1989
- Deep-level transient spectroscopy measurements of majority carrier traps in neutron irradiated n-type silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1989
- Radiation defects in fast neutron-, electron-, and γ-irradiated siliconPhysica Status Solidi (a), 1987
- Trapping center parameters in indium selenide single crystals by thermally stimulated current measurementsJournal of Applied Physics, 1983
- Defect production and lifetime control in electron and γ-irradiated siliconJournal of Applied Physics, 1982
- Transient capacitance studies of an electron trap at E c−E T = 0.105 eV in phosphorus-doped siliconJournal of Applied Physics, 1982
- Conparison of Neutron and 2 MeV Electron Damage in N-Type Silicon by Deep-Level Transient SpectroscopyIEEE Transactions on Nuclear Science, 1981
- Thermally stimulated current measurements on silicon junctions produced by implantation of low energy boron ionsSolid-State Electronics, 1974
- Neutron Spectra of 214Am/B, 241Am/Be, 241Am/F, 242Cm/Be, 238Pu/13C and 252Cf isotopic neutron sourcesThe International Journal of Applied Radiation and Isotopes, 1973
- Impurity centers in PN junctions determined from shifts in the thermally stimulated current and capacitance response with heating rateSolid-State Electronics, 1972