Investigation on the Neff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations
- 1 August 1996
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 377 (2-3) , 265-275
- https://doi.org/10.1016/0168-9002(95)01410-1
Abstract
No abstract availableKeywords
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