Chemical reactions and temperature‐dependent interface formation of Ti/InP (110)
- 1 June 1989
- journal article
- Published by Wiley in Surface and Interface Analysis
- Vol. 14 (6-7) , 315-324
- https://doi.org/10.1002/sia.740140608
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Valence-band offset and interface formation in ZnTe/GaSb(110) studied by photoemission using synchrotron radiationJournal of Vacuum Science & Technology B, 1988
- 3dtransition metals on InP(110): A comparative study of reactive interface evolutionPhysical Review B, 1988
- Surface shifts in the In 4dand P 2pcore-level spectra of InP(110)Physical Review B, 1987
- Chemical reaction and Schottky barrier formation at the Ti/InP(110) and Sn/InP(110) interfaces: Reactive versus nonreactive casesJournal of Vacuum Science & Technology B, 1987
- Soft-x-ray photoemission study of Co–n-type InP(110) interfacePhysical Review B, 1986
- Electronic properties and chemistry of Ti/GaAs and Pd/GaAs interfacesPhysical Review B, 1986
- Interfacial chemistry and Schottky-barrier formation of the Ni/InP(110) and Ni/GaAs(110) interfacesPhysical Review B, 1985
- The Ag-InP(110) interface: Photoemission studies of interfacial reactions and Schottky-barrier formationPhysical Review B, 1984
- Low temperature reactions at Si/metal interfaces; What is going on at the interfaces?Surface Science Reports, 1983
- The structure and properties of metal-semiconductor interfacesSurface Science Reports, 1982