Low temperature reactions at Si/metal interfaces; What is going on at the interfaces?
- 31 December 1983
- journal article
- Published by Elsevier in Surface Science Reports
- Vol. 3 (7) , 357-412
- https://doi.org/10.1016/0167-5729(84)90003-7
Abstract
No abstract availableKeywords
This publication has 47 references indexed in Scilit:
- Noble metal/Si(111) interfaces studied by MeV ion scatteringJournal of Vacuum Science & Technology A, 1984
- Pseudomorphic Structure at the Interface of Ge on Si(111) Studied by High-Energy-Ion ScatteringPhysical Review Letters, 1981
- Barrier heights and silicide formation for Ni, Pd, and Pt on siliconPhysical Review B, 1981
- A Model on the Mechanism of Room Temperature Interfacial Intermixing Reaction in Various Metal‐Semiconductor Couples: What Triggers the Reaction?Journal of the Electrochemical Society, 1980
- Electronic structure of a Pd monolayer on an Si (111) surfacePhysical Review B, 1980
- Si(001) surface studies using high energy ion scatteringNuclear Instruments and Methods, 1980
- Photoemission studies of the silicon-gold interfacePhysical Review B, 1979
- Valence-band Auger line shapes for Si surfaces: Simplified theory and corrected numerical resultsPhysical Review B, 1978
- Chemical Bonding and Structure of Metal-Semiconductor InterfacesPhysical Review Letters, 1975
- Structure and electrical characteristics of epitaxial palladium silicide contacts on single crystal silicon and diffused P-N diodesSolid-State Electronics, 1972