Ferromagnetic semiconductor heterostructures based on (GaMn)As
- 1 July 2000
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 18 (4) , 1247-1253
- https://doi.org/10.1116/1.582334
Abstract
Growth, transport, magnetic, magneto-optical, and magnetotunneling properties of ferromagnetic semiconductor (GaMn)As and its quantum heterostructures, including superlattices and tunnel junctions, are presented. Spin-related phenomena in such III–V based ferromagnetic quantum heterostructures are shown to give a new degree of freedom in the band-gap engineering and wave function engineering for semiconductor electronics and photonics.Keywords
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