Electrical Methods for Determining the Positions of Dislocation Regions in Germanium
- 1 April 1958
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society
- Vol. 71 (4) , 647-653
- https://doi.org/10.1088/0370-1328/71/4/313
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- The Crystalline Perfection of Some Semiconductor Single Crystals†Journal of Electronics and Control, 1957
- Anisotropic Diffusion Lengths in Germanium and Silicon Crystals containing Parallel Arrays of Edge Dislocations †Journal of Electronics and Control, 1957
- XXXVIII. The Isothermal Reverse Voltage-Current Characteristics of Small Area Alloy Contacts on Germanium†Journal of Electronics and Control, 1957
- Copper Precipitation on Dislocations in SiliconJournal of Applied Physics, 1956
- Effect of Dislocations on the Minority Carrier Lifetime in SemiconductorsPhysical Review B, 1956
- Dislocations in Plastically Deformed GermaniumPhysical Review B, 1954
- Observations of Dislocations in Lineage Boundaries in GermaniumPhysical Review B, 1953
- Resistance of Germanium ContactsProceedings of the Physical Society. Section B, 1952