The Crystalline Perfection of Some Semiconductor Single Crystals†
- 1 November 1957
- journal article
- research article
- Published by Taylor & Francis in Journal of Electronics and Control
- Vol. 3 (5) , 487-493
- https://doi.org/10.1080/00207215708937109
Abstract
Single crystals of germanium, silicon, indium antimonide and mercury telluride were examined by the Guinier-Tennevin x-ray technique. The degree of perfection as shown by the width of the focused Laue image was compared with the dislocation density as revealed by etch-pits.Keywords
This publication has 10 references indexed in Scilit:
- Etch Pits in Indium AntimonideJournal of Electronics and Control, 1957
- Copper Precipitation on Dislocations in SiliconJournal of Applied Physics, 1956
- Effect of Dislocations on the Minority Carrier Lifetime in SemiconductorsPhysical Review B, 1956
- The study of semiconductor crystal perfection by X-ray diffraction methodsBritish Journal of Applied Physics, 1955
- Lamellar Defects in Single Crystals of SiliconProceedings of the Physical Society. Section B, 1955
- Observations of Dislocations in Lineage Boundaries in GermaniumPhysical Review B, 1953
- The Mobility and Life of Injected Holes and Electrons in GermaniumPhysical Review B, 1951
- Sur deux variantes de la méthode de Laue et leurs applicationsActa Crystallographica, 1949
- The Production of Large Single Crystals of Lithium FluorideReview of Scientific Instruments, 1936
- Ein neues Verfahren zur Messung der Kristallisationsgeschwindigkeit der MetalleZeitschrift für Physikalische Chemie, 1918