Correlation between Emission Spectra and Defect Position in InGaN‐Based Light Emitting Devices
Open Access
- 19 December 2002
- journal article
- research article
- Published by Wiley in physica status solidi (c)
- No. 1,p. 537-541
- https://doi.org/10.1002/pssc.200390108
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Microphotoluminescence Intensity Images of InGaN Single Quantum WellsJapanese Journal of Applied Physics, 1999
- Spiral Growth of InGaN Nanoscale Islands on GaNJapanese Journal of Applied Physics, 1998
- Pit formation in GaInN quantum wellsApplied Physics Letters, 1998
- Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wellsApplied Physics Letters, 1998
- GaN-based blue/green semiconductor laserIEEE Journal of Selected Topics in Quantum Electronics, 1997
- High-power InGaN single-quantum-well-structure blue and violet light-emitting diodesApplied Physics Letters, 1995
- High dislocation densities in high efficiency GaN-based light-emitting diodesApplied Physics Letters, 1995