Nonlinear optical studies of relaxation times of carriers in MBE layers of PbSe and PbEuSe
- 1 December 1988
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 47 (4) , 387-391
- https://doi.org/10.1007/bf00615503
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- MBE of Pb1−xEuxSe for the use in IR devicesJournal of Crystal Growth, 1987
- Hole induced four wave mixing and intervalence band relaxation times in p-GaAs and p-GeSolid State Communications, 1985
- Diode lasers of lead-europium-selenide-telluride grown by molecular beam epitaxyApplied Physics Letters, 1983
- Nonlinear optical studies of picosecond relaxation times of electrons in n-GaAs and n-GaSbApplied Physics Letters, 1983
- Four-wave mixing via optically generated free carriers in Hg1−xCdxTeApplied Physics Letters, 1982
- Difference-frequency variation of the free-carrier-induced, third-order nonlinear susceptibility in n-InSbApplied Physics Letters, 1982
- Effect of Carrier Scattering on Nonlinear Optical Susceptibility due to Mobile Carriers in InSb, InAs, and GaAsPhysical Review B, 1970
- Theory of Optical Mixing by Mobile Carriers in SemiconductorsPhysical Review Letters, 1966