On plastic flow and work hardening in strained layer heterostructures
- 7 March 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (10) , 1218-1220
- https://doi.org/10.1063/1.111957
Abstract
We present an alternate model for metastable strain relaxation in heteroepitaxial semiconductor structures which includes the elastic interaction between misfit dislocations. The concept of the self-stress of straight misfit dislocations lying in the interface in two orthogonal arrays is introduced and applied to standard expressions for the residual in-plane epitaxial film stress of noninteracting dislocations. Our model of plastic flow and work hardening in strained layer heterostructures agrees well with the experimental work. The theoretical analysis can be applied to most of the pseudomorphic and heteroepitaxial material systems of current interest.Keywords
This publication has 5 references indexed in Scilit:
- Work hardening and strain relaxation in strained-layer buffersApplied Physics Letters, 1991
- Interpretation of dislocation propagation velocities in strained GexSi1−x/Si(100) heterostructures by the diffusive kink pair modelJournal of Applied Physics, 1991
- Erratum: Relaxation of strained-layer semiconductor structures via plastic flow [Appl. Phys. Lett. 5 1, 1325 (1987)]Applied Physics Letters, 1988
- Relaxation of strained-layer semiconductor structures via plastic flowApplied Physics Letters, 1987
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976