adsorption on GaAs(110) and surface etching at low temperature
- 15 October 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 46 (16) , 10197-10200
- https://doi.org/10.1103/physrevb.46.10197
Abstract
The adsorption and reactivity of on GaAs (110) was studied in the temperature range of 25≤T≤300 K with photoemission spectroscopy. Initial adsorption was dissociative at all temperatures with Br bonding to both As and Ga. Thermally activated etching was observed after warming up a surface with condensed multilayers. formation was evident at 50–100 K but this species desorbed for T≥150 K. formation also occurred and this species remained on the surface until ∼250 K. Br-Ga and Br-As surface species were evident for all temperatures. The erosion of the (110) surface was nearly stoichiometric.
Keywords
This publication has 13 references indexed in Scilit:
- Bromine-induced surface states on cleaved GaAs(110) surfaces: experiment and tight-binding modelSurface Science, 1992
- Surface science aspects of etching reactionsSurface Science Reports, 1992
- The chemisorption of chlorosilanes and chlorine on Si(111)7 × 7Surface Science, 1990
- Core-level photoemission investigation of atomic-fluorine adsorption on GaAs(110)Physical Review B, 1989
- Surface core-level shifts for chlorine covered GaAs (1 1 0) surfacesSolid State Communications, 1985
- Synchrotron photoemission investigation of the initial stages of fluorine attack on Si surfaces: Relative abundance of fluorosilyl speciesPhysical Review B, 1984
- Probing the transition layer at the SiO2-Si interface using core level photoemissionApplied Physics Letters, 1984
- A simple, controllable source for dosing molecular halogens in UHVJournal of Vacuum Science & Technology A, 1983
- Chemisorption geometry on cleaved III-V surfaces: Cl on GaAs, GaSb, and InSbPhysical Review B, 1979
- Chemisorption-Site Geometry from Polarized Photoemission: Si(111)Cl and Ge(111)ClPhysical Review Letters, 1976