Hg(1−x)MnxTe as a new infrared detector material
- 31 December 1991
- journal article
- review article
- Published by Elsevier in Infrared Physics
- Vol. 31 (2) , 117-166
- https://doi.org/10.1016/0020-0891(91)90064-m
Abstract
No abstract availableThis publication has 100 references indexed in Scilit:
- Crystal growth of Hg1−xMnxTe by solid state recrystallizationJournal of Crystal Growth, 1989
- Diluted magnetic semiconductorsJournal of Applied Physics, 1988
- Photoelectromagnetic effect in semiconductors and its applicationsProgress in Quantum Electronics, 1987
- Composition gradients in bridgman-grown Hg1−xMnxTeMaterials Letters, 1986
- Electrical properties of shallow levels in p-type HgCdTeJournal of Applied Physics, 1986
- Physics and applications of II–VI semimagneticsJournal of Crystal Growth, 1985
- Distribution coefficient of Mn IN Cd−xMnxTe single crystalsMaterials Letters, 1985
- Electrical, optical, and magnetic properties of Hg1−xMnxTeJournal of Vacuum Science and Technology, 1982
- Calculation of the Auger lifetime in p-type Hg1-xCdxTeJournal of Applied Physics, 1981
- Physicochemical properties and crystal growth of AIIBVI - MnBVI systemsProgress in Crystal Growth and Characterization, 1978