Polarizability of shallow donors in silicon - A reply
- 30 June 1976
- journal article
- editorial
- Published by Elsevier in Solid State Communications
- Vol. 19 (4) , 323-324
- https://doi.org/10.1016/0038-1098(76)91342-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Dielectric Anomaly and the Metal-Insulator Transition in-Type SiliconPhysical Review Letters, 1975
- Polarizabilities of shallow donors in siliconSolid State Communications, 1974
- Semiconductor-to-Metal Transition in-Type Group IV SemiconductorsReviews of Modern Physics, 1968
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968
- Effect of Neutral Impurity on the Microwave Conductivity and Dielectric Constant of Germanium at Low TemperaturesPhysical Review B, 1956