Heavy ion and proton analysis of a GaAs C-HIGFET SRAM
Open Access
- 1 December 1993
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 40 (6) , 1660-1665
- https://doi.org/10.1109/23.273495
Abstract
We present heavy ion and proton upset measurements, including total dose, and displacement damage on a one micron, GaAs, complementaty-heterostructure insulated-gate FET (C-HIGFET) 1k x 1 SRAM. SEU characteristics show a two order of magnitude improvement over GaAs MESFET technology. Heavy-ion upset equilibrium measurements show that all cells upset with equal probability at the five percent LET threshold. This indicates that for this device the shape of the cross section versus LET curve is a result of a probability distribution that applies to all cells and is not the result of variations in cell sensitivities. The data set also indicates that the traditional two-dimensional cos(theta) normalization to LET and fluence are not applicable to this technology.Keywords
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