Anisotropy Corrections to the Valence Band in the Magnetic Field
- 1 December 1963
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 132 (5) , 1929-1933
- https://doi.org/10.1103/physrev.132.1929
Abstract
The energy levels for the holes in the valence semi-conductors in a constant magnetic field are considered on the basis of Luttinger's theory. The corrections due to the anisotropy of the energy bands and to the nonzero momentum component along the magnetic field are computed by the second-order perturbation calculation and are found to be generally small.Keywords
This publication has 10 references indexed in Scilit:
- Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation PotentialsPhysical Review B, 1963
- Quantum Effects in Ge and Si. IPhysical Review B, 1962
- Valence Bands of Germanium and Silicon in an External Magnetic FieldPhysical Review B, 1962
- Faraday Effect for Direct Magneto-optical Transitions in GermaniumProceedings of the Physical Society, 1961
- Cyclotron Resonance in GermaniumPhysical Review B, 1961
- Theory of the Valence Band Structure of Germanium in an External Magnetic FieldPhysical Review B, 1960
- Theory of Optical Magneto-Absorption Effects in SemiconductorsPhysical Review B, 1959
- Theory of the Effect of a Magnetic Field on the Absorption Edge in SemiconductorsProceedings of the Physical Society, 1958
- Quantum Theory of Cyclotron Resonance in Semiconductors: General TheoryPhysical Review B, 1956
- Cyclotron Resonance of Electrons and Holes in Silicon and Germanium CrystalsPhysical Review B, 1955