Preparation-dependent relaxation in n-type a-Si:H

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Abstract
After an initial anneal at 180°C, n-type a-Si: H specimens have been subjected to different combinations of illumination and quench treatments so as to produce identical Fermi-level positions after preparation. Contrary to expectations, we find that the differently prepared metastable states relax with significantly different rates, with activation energies ranging from almost zero to 1·8 eV. The relevance of these results is discussed in terms of existing models of the autocompensation process.