Energy Distribution and Yield Measurement of Secondary Electrons to Evaluate the Equilibrium Charging Voltage of an Isolated Electrode during Negative-Ion Implantation
- 1 December 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (12R) , 6487
- https://doi.org/10.1143/jjap.34.6487
Abstract
The negative-ion implantation method has the advantage that the charging voltage of an isolated electrode, or electrically insulated conductive material, stays as low as at most +10 V during implantation without any charge neutralization. The significant parameters, the energy distribution and the yield of secondary electrons in negative-ion implantation, have been measured in the energy range below 40 keV. The results show that the energy distribution, which is independent of ion energy in shape, has a low energy peak together with a long tail extending toward the high-energy region, and that the yield increases with ion energy. Furthermore, the equilibrium charging-voltage equation of an isolated electrode during negative-ion implantation is presented. The charging voltages estimated according to the equation are found to be in good agreement with those measured directly with a high-input-impedance voltmeter. It is also demonstrated that the charging voltage is proportional to the yield and to ion velocity in the linear region of the kinetic electron emission.Keywords
This publication has 15 references indexed in Scilit:
- Negative-ion implantation techniqueNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
- Projectile dependence of ion-induced electron emission from thin carbon foilsPhysical Review B, 1993
- Projectile- and charge-state-dependent electron yields from ion penetration of solids as a probe of preequilibrium stopping powerPhysical Review A, 1992
- Wafer Charging Control in High‐Current ImplantersJournal of the Electrochemical Society, 1991
- Ion beam synthesis of thin buried layers of SiO2 in siliconVacuum, 1986
- Ion-induced secondary electron spectra from clean metal surfacesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Wafer charging and beam interactions in ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Recent advances in the field of ion-induced kinetic electron emission from solidsVacuum, 1983
- Secondary electron and backscattering measurements for polycrystalline copper with a spherical retarding-field analyserJournal of Physics D: Applied Physics, 1973
- Slow electron scattering from metals: I. The emission of true secondary electronsSurface Science, 1969