Photo-induced current measurement for the characterized of deep-level traps in lattice-matched MODFETs on InP substrate
- 31 August 1992
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 35 (8) , 1129-1137
- https://doi.org/10.1016/0038-1101(92)90014-4
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Effect of temperature on the electron distribution in illuminated heterostructuresPhysical Review B, 1989
- Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETsIEEE Electron Device Letters, 1988
- High-performance submicrometer AlInAs-GaInAs HEMT'sIEEE Electron Device Letters, 1988
- Flaw states in processed GaAs, detected by photoconductive and photo field-effect techniquesJournal of Applied Physics, 1985
- Characterization of electron traps in ion-implanted GaAs MESFET's on undoped and Cr-doped LEC semi-insulating substratesIEEE Transactions on Electron Devices, 1983
- A model for the interpretation of measurements of photoionisation and capture cross sections associated with deep-level impuritiesJournal of Physics C: Solid State Physics, 1981
- Photo-f.e.t. method: high-resolution deep-level measurement technique using a m.e.s.f.e.t. structureElectronics Letters, 1980
- Hole traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974