Electrical detection of immobilized proteins with ungated AlGaN∕GaN high-electron-mobility Transistors
- 8 July 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (2) , 023508
- https://doi.org/10.1063/1.1994951
Abstract
Ungated high-electron-mobility transistor (HEMT) structures were functionalized in the gate region with aminopropyl silane. This serves as a binding layer to the AlGaN surface for attachment of fluorescent biological probes. Fluorescence microscopy shows that the chemical treatment creates sites for specific absorption of probes. Biotin was then added to the functionalized surface to bind with high affinity to streptavidin proteins. The HEMT drain-source current showed a clear decrease of as this protein was introduced to the surface, showing the promise of this all-electronic detection approach for biological sensing.
This publication has 19 references indexed in Scilit:
- Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranesApplied Physics Letters, 2004
- Molecular Beacon DNA Probes and Their Bioanalytical ApplicationsApplied Spectroscopy, 2004
- GaN-based diodes and transistors for chemical, gas, biological and pressure sensingJournal of Physics: Condensed Matter, 2004
- Field Effect Transistor-based Bimolecular Sensor Employing a Pt Reference Electrode for the Detection of Deoxyribonucleic Acid SequenceJapanese Journal of Applied Physics, 2004
- Gateless AlGaN/GaN HEMT response to block co-polymersSolid-State Electronics, 2004
- AlGaN/GaN HEMT based liquid sensorsSolid-State Electronics, 2003
- pH response of GaN surfaces and its application for pH-sensitive field-effect transistorsApplied Physics Letters, 2003
- Gas sensitive GaN/AlGaN-heterostructuresSensors and Actuators B: Chemical, 2002
- GaN-based heterostructures for sensor applicationsDiamond and Related Materials, 2002
- Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical SpeciesScience, 2001