Evidence of a Hybridization Gap in ``Semimetallic'' InAs/GaSb Systems
- 16 June 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 78 (24) , 4613-4616
- https://doi.org/10.1103/physrevlett.78.4613
Abstract
InAs/GaSb composite quantum wells sandwiched by AlSb are studied by using capacitance-voltage, quantum Hall, and three-terminal transfer measurements. Our data reveal a positive energy gap resulting from the hybridization of in-plane dispersions of electrons in InAs and holes in GaSb for conventionally recognized “semimetallic” InAs/GaSb heterostructures.Keywords
This publication has 13 references indexed in Scilit:
- Electron–hole hybridizing in InAs single quantum wells clad with GaSbSuperlattices and Microstructures, 1997
- Semimetal-semiconductor transition in InAsGaSb heterostructuresSurface Science, 1996
- Band-structure tailoring by electric field in a weakly coupled electron-hole systemApplied Physics Letters, 1995
- Optical and magnetotransport properties of semimetallic InAs/(In,Ga)Sb superlatticesPhysica B: Condensed Matter, 1994
- Electronic states and quantum Hall effect in GaSb-InAs-GaSb quantum wellsPhysical Review B, 1987
- Pressure Dependence of Band Offsets in an InAs-GaSb SuperlatticePhysical Review Letters, 1986
- Molecular Beam Epitaxy and HeterostructuresPublished by Springer Nature ,1985
- Landau levels and magneto-optics of semiconductor superlatticesSurface Science, 1984
- Electronic structure and semiconductor-semimetal transition in InAs-GaSb superlatticesPhysical Review B, 1983
- InAs-GaSb superlattice energy structure and its semiconductor-semimetal transitionPhysical Review B, 1978