Irradiation and annealing of silicon planar transistors
- 1 April 1966
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (4) , 287-302
- https://doi.org/10.1016/0038-1101(66)90058-x
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Low-frequency generation noise in junction field effect transistorsSolid-State Electronics, 1965
- Generation of openings in vacuum deposited SiO diffusion masking filmsSolid-State Electronics, 1965
- Electrical Properties of Oxidized Si P-N JunctionsJapanese Journal of Applied Physics, 1964
- Surface Effects of Radiation on Transistors*Bell System Technical Journal, 1963
- Some Effects of Fast Neutron Irradiation on Carrier Lifetimes in SiliconJournal of Applied Physics, 1959
- Stabilization of Silicon Surfaces by Thermally Grown Oxides*Bell System Technical Journal, 1959
- Neutron-Bombardment Damage in SiliconPhysical Review B, 1958
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949