High-performance Zn-doped-base InP/InGaAs double-heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy
- 28 February 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (9) , 1111-1113
- https://doi.org/10.1063/1.110844
Abstract
We report the successful growth of high‐quality InP/InGaAs double‐heterojunction bipolar transistors with heavily Zn‐doped base layers (p=4×1019 cm−3) using metalorganic vapor phase epitaxy. Interrupting the growth for 30 min after growing a heavily Si‐doped subcollector (n=2×1019 cm−3) is shown to eliminate the excessive nonequilibrium group III interstitials that enhance abnormal Zn diffusivity in the subsequently grown base region. Gummel plots of the fabricated microwave transistors show that they have ideal turn‐on characteristics in spite of having only 5‐nm‐thick undoped spacer layers inserted between the emitter and base. The transistors obtain a maximum oscillation frequency fmax of 178 GHz and a current gain cutoff frequency fT of 126 GHz.Keywords
This publication has 4 references indexed in Scilit:
- High-frequency InP/InGaAs double heterojunction bipolar transistors on Si substrateIEEE Electron Device Letters, 1993
- Suppression of abnormal Zn diffusion in InP/InGaAs heterojunction bipolar transistor structuresApplied Physics Letters, 1993
- Abnormal redistribution of Zn in InP/InGaAs heterojunction bipolar transistor structuresApplied Physics Letters, 1992
- Thermodynamic explanation to the enhanced diffusion of base dopant in AlGaAs-GaAs n p n bipolar transistorsApplied Physics Letters, 1990