Suppression of abnormal Zn diffusion in InP/InGaAs heterojunction bipolar transistor structures
- 18 January 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (3) , 284-285
- https://doi.org/10.1063/1.108991
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Thermodynamic explanation to the enhanced diffusion of base dopant in AlGaAs-GaAs n p n bipolar transistorsApplied Physics Letters, 1990
- Secondary ion mass spectroscopy depth profiles of heterojunction bipolar transistor emitter-base heterojunctions grown by low pressure OMVPEJournal of Crystal Growth, 1988
- Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxyJournal of Applied Physics, 1988