InP/InGaAs Heterostructure Bipolar Transistors Grown at Low Temperature by Metalorganic Chemical Vapor Deposition
- 1 February 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (2B) , L258
- https://doi.org/10.1143/jjap.30.l258
Abstract
We describe the performance of InP/InGaAs heterostructure bipolar transistors (HBTs) grown at low temperature by metalorganic chemical vapor deposition (MOCVD). HBTs with a base thickness of 70 nm and doping level of 1×1019 cm-3 show excellent current gain characteristics (current gains h FE>300, ideality factors n B17 cm-3.Keywords
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