High performance InP/InGaAs heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy

10 July 1989

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 55 (2) , 171-172
https://doi.org/10.1063/1.102133

Abstract

We demonstrate high performance InGaAs/InP heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy. A unity current gain cutoff frequency fT=78 GHz and a maximum oscillation frequency fmax=42 GHz are achieved in transistors with emitter size 2.5×11 μm2. Ring oscillators using nonthreshold logic show a propagation delay of 31 ps.

Keywords

This publication has 11 references indexed in Scilit:

Hot-electron InGaAs/InP heterostructure bipolar transistors with f/sub T/ of 110 GHz
IEEE Electron Device Letters, 1989
High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors
IEEE Electron Device Letters, 1988
Scaling ‘ballistic’ heterojunction bipolar transistors
Electronics Letters, 1988
High-current-gain InGaAs/InP double-heterojunction bipolar transistors grown by metal organic vapor phase epitaxy
IEEE Electron Device Letters, 1988
Self-aligned AlGaAs/GaAs HBT with low emitter resistance utilizing InGaAs cap layer
IEEE Transactions on Electron Devices, 1988
Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits
IEEE Transactions on Electron Devices, 1987
Double-heterojunction bipolar transistors in InP/GaInAs grown by metal organic chemical vapour deposition
Electronics Letters, 1987
Nonequilibrium electron transport in bipolar devices
Applied Physics Letters, 1987
A stripe-geometry InGaAsP/InP heterojunction bipolar transistor suitable for optical integration
IEEE Electron Device Letters, 1987
Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistors
Applied Physics Letters, 1984