Nonequilibrium electron transport in bipolar devices
- 6 July 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (1) , 42-44
- https://doi.org/10.1063/1.98881
Abstract
The dynamics of nonequilibrium electron transport in bipolar devices have been investigated by calculating minority‐carrier elastic and inelastic scattering rates as a function of energy for different majority‐carrier concentrations in typical p‐type III‐V semiconductors. Scattering rates depend on the majority‐carrier concentration and a constraint involving the ratio of electron and heavy‐hole effective mass.Keywords
This publication has 6 references indexed in Scilit:
- Electroluminescence from the base of a GaAs/AlGaAs double heterojunction bipolar transistorApplied Physics Letters, 1987
- Base transport dynamics in a heterojunction bipolar transistorApplied Physics Letters, 1986
- Erratum: ‘‘Ballistic’’ injection devices in semiconductors [Appl. Phys. Lett. 4 8, 1609 (1986)]Applied Physics Letters, 1986
- Quantum-well resonant tunneling bipolar transistor operating at room temperatureIEEE Electron Device Letters, 1986
- ‘‘Ballistic’’ injection devices in semiconductorsApplied Physics Letters, 1986
- The dielectric function of holes in semiconductors of zinc-blende structureSolid State Communications, 1986