High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors
- 1 October 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (10) , 524-526
- https://doi.org/10.1109/55.17832
Abstract
Common-emitter current gains of 115 and 170 are achieved in transistors with emitter dimensions as small as 0.3*3 and 0.8*3 mu m/sup 2/, respectively. These results are comparable with scaling experiments reported for Si bipolar devices and represent a significant improvement over AlGaAs/GaAs heterostructure bipolar transistors. Both the low surface recombination velocity and nonequilibrium carrier transport in the thin (800-AA) InGaAs base enhance the DC performance of these transistors.Keywords
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