Redistribution of Zn in GaAs-AlGaAs heterojunction bipolar transistor structures
- 26 March 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (13) , 1251-1253
- https://doi.org/10.1063/1.102528
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Zinc delta doping of GaAs by organometallic vapor phase epitaxyApplied Physics Letters, 1989
- Near-ideal lateral scaling in abrupt Al0.48In0.52As/In0.53Ga0.47As heterostructure bipolar transistors prepared by molecular beam epitaxyApplied Physics Letters, 1989
- High-speed divider using GaAs ECL/CML gate arrayElectronics Letters, 1989
- Hot-electron InGaAs/InP heterostructure bipolar transistors with f/sub T/ of 110 GHzIEEE Electron Device Letters, 1989
- Secondary ion mass spectroscopy depth profiles of heterojunction bipolar transistor emitter-base heterojunctions grown by low pressure OMVPEJournal of Crystal Growth, 1988
- The influence of growth conditions on the electrical properties of GaAs/Al0.30Ga0.70As p+/n heterojunctionsJournal of Crystal Growth, 1988
- The control and modeling of doping profiles and transients in MOVPE growthJournal of Crystal Growth, 1988
- Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxyJournal of Applied Physics, 1988
- High-speed frequency dividers using self-aligned AlGaAs/GaAs heterojunction bipolar transistorsIEEE Electron Device Letters, 1987
- Diffusion of zinc in gallium arsenide: A new modelJournal of Applied Physics, 1981