Improvement of the interface quality during thermal oxidation of Al0.98Ga0.02As layers due to the presence of low-temperature-grown GaAs
- 10 July 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (2) , 205-207
- https://doi.org/10.1063/1.126925
Abstract
No abstract availableKeywords
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