The transport properties of vanadium-doped TiSe2under pressure
- 10 September 1982
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 15 (25) , L871-L874
- https://doi.org/10.1088/0022-3719/15/25/004
Abstract
Measurements of the temperature dependence of the resistivity of V0.01Ti0.99Se2 and V0.03Ti0.97Se2 at pressures of up to 15 kbar indicate that the tendency for low-temperature carrier localisation at ambient pressure is reduced at high pressure. The authors consider that this is due to the increase in carrier concentration that results from the increase in p-d band overlap under pressure.Keywords
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