Low-Field Time-Dependent Dielectric Integrity
- 1 August 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Reliability
- Vol. R-29 (3) , 217-221
- https://doi.org/10.1109/tr.1980.5220804
Abstract
A major contributor to reliability failures in integrated circuits has been the failure of dielectrics under operating stress. This paper summarizes extensive studies carried out on many manifestations of dielectric integrity failure. The outcome is a single model used to predict failure from data obtained in accelerated testing. The model contains the effect of temperature and applied voltage on the tendency to fail as well as the breakdown of the region subject to stress.Keywords
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