Growth of GaN on highly mismatched substrate and its application to novel devices
- 31 March 1999
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 8 (2-5) , 302-304
- https://doi.org/10.1016/s0925-9635(98)00264-7
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Investigation of the Leakage Current in GaN P-N JunctionsJapanese Journal of Applied Physics, 1998
- Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaNJapanese Journal of Applied Physics, 1998
- Tem/Hrem Analysis of Defects in GaN Epitaxial Layers Grown by MOVPE on SiC and SapphireMRS Proceedings, 1997
- Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3Journal of Applied Physics, 1996
- Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on SapphireJapanese Journal of Applied Physics, 1996
- Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation MethodJapanese Journal of Applied Physics, 1996
- High dislocation densities in high efficiency GaN-based light-emitting diodesApplied Physics Letters, 1995
- Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPEJournal of Crystal Growth, 1991
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986