The structure of ion-implanted gold layers in single crystal silicon

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Abstract
By implanting 30–50 kev gold ions into silicon high concentrations of gold (approaching 20 at. %) have been produced in shallow (∼200 Å) surface layers. Implantations were usually carried out at room temperature and electron microscopy has been used to study the structure of implanted layers as a function of heat treatment which anneals the lattice damage created during implantation. For moderate doses (∼1016 ions/cm2), the amorphous surface produced during implantation anneals by an epitaxial process at ∼630°C but defects in the form of microtwins and other planar defects remain. For the highest doses (∼1017 ions/cm2), the eutectic nature of the Si-Au system is manifest in giving improved recrystallization at somewhat lower temperatures and at the same time widespread surface gold precipitation occurs. In certain areas an f.c.c. Si-Au phase was also formed.