Effect of spatial correlation of DX centers on the mobility in heavily doped n-type GaAs

20 April 1992

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 60 (16) , 1993-1995
https://doi.org/10.1063/1.107121

Abstract

The persistent photoconductivity effect at low temperatures and under hydrostatic pressure is used to study the effect of spatial correlation of DX centers on the mobility and Shubnikov–de Haas oscillations in heavily doped n‐type GaAs. Upon illumination, the transport mobility and the quantum relaxation time τ_s decrease rapidly with increasing carrier concentration. This is due to the destruction of the correlated distribution of DX centers by the random photoionization process. The enhancement of τ_s due to correlations is estimated.

Keywords

This publication has 18 references indexed in Scilit:

Appearance and destruction of spatial correlation of DX charges in GaAs
Semiconductor Science and Technology, 1991
High pressure studies of electron mobility in heavily doped GaAs: fitting of the absolute value
Semiconductor Science and Technology, 1991
Negative charge state of theDXcenter in ${Al}_{x}$ ${Ga}_{1 - x}$ As:Si
Physical Review Letters, 1991
Magneto-Optical Investigations of DX Centres in AlxGa1-xAs
Materials Science Forum, 1991
Pressure dependence of electron concentration and mobility in GaAs:Si-effects of on-site and inter-site interactions within a system of DX centres
Semiconductor Science and Technology, 1990
Electron trapping by metastable effective-mass states of DX donors in indirect-band-gap ${Al}_{x}$ ${Ga}_{1 - x}$ As:Te
Physical Review B, 1989
Evidence against the negative-charge-state model for theDXcenter inn-type GaAs
Physical Review Letters, 1989
Investigation of theDXcenter in heavily dopedn-GaAs
Physical Review Letters, 1987
The k.p interaction in InP and GaAs from the band-gap dependence of the effective mass
Journal of Physics C: Solid State Physics, 1984
Electronic Conduction in Solids with Spherically Symmetric Band Structure
Proceedings of the Physical Society. Section B, 1956