Critical microstructure for ion-implantation gettering effects in silicon
- 1 April 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (7) , 325-327
- https://doi.org/10.1063/1.89385
Abstract
The nature of residual ion‐implantation damage responsible for gettering deleterious impurities from active semiconductor device regions in Si has been studied. A propensity for dislocations of the type b=1/2 〈110〉 to gather metallic contaminant (e.g., Cu), as compared to Frank partials b=1/3 〈111〉, is established. Transmission electron microscopy and pulsed leakage measurements are used to demonstrate that the density of 1/2 〈110〉 dislocations introduced by Xe implantation greatly influences gettering efficiency.Keywords
This publication has 6 references indexed in Scilit:
- Generation lifetime investigation of ion-damage gettered silicon using MOS structureJournal of Applied Physics, 1976
- Direct comparison of ion−damage gettering and phosphorus−diffusion gettering of Au in SiJournal of Applied Physics, 1975
- Gettering rates of various fast-diffusing metal impurities at ion-damaged layers on siliconApplied Physics Letters, 1972
- On the separation of bulk and surface components of lifetime using the pulsed MOS capacitorSolid-State Electronics, 1970
- On the determination of minority carrier lifetime from the transient response of an MOS capacitorIEEE Transactions on Electron Devices, 1967
- Carrier concentration and minority carrier lifetime measurement in semiconductor epitaxial layers by the mos capacitance methodSolid-State Electronics, 1966