Gettering rates of various fast-diffusing metal impurities at ion-damaged layers on silicon
- 15 November 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (10) , 485-487
- https://doi.org/10.1063/1.1654228
Abstract
High‐temperature gettering of Fe, Co, Ni, Cu, and Au by ion‐damaged surface layers on silicon wafers has been studied by Rutherford backscattering of 4He+ ions incident at 1.75 or 2 MeV. Analysis showed impurity levels in the damaged layers ranging from 1013–1017/cm2. The metals fall into two groups: those which are gettered slowly‐Fe, Co, and Au— and those gettered rapidly‐Cu and Ni. This trend is predicted by a simple diffusion model using published interstitial solubilities and diffusivities.Keywords
This publication has 8 references indexed in Scilit:
- Channeling-Effect Analysis of Thin Films on Silicon: Aluminum OxideJournal of Applied Physics, 1971
- Analysis of amorphous layers on silicon by backscattering and channeling effect measurementsSurface Science, 1970
- The gettering of gold and copper from siliconSolid-State Electronics, 1968
- Influence of Bulk and Surface Properties on Image Sensing Silicon Diode ArraysBell System Technical Journal, 1968
- A Study of Gettering Effect of Metallic Impurities in SiliconJapanese Journal of Applied Physics, 1968
- Poisoning and Gettering Effects in Silicon JunctionsJournal of the Electrochemical Society, 1965
- Gettering of Metallic Impurities from Planar Silicon DiodesJournal of the Electrochemical Society, 1963
- Metal Precipitates in Silicon p-n JunctionsJournal of Applied Physics, 1960