Electron-Hole-Pair Creation Energies in Semiconductors
- 1 December 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 35 (22) , 1522-1525
- https://doi.org/10.1103/physrevlett.35.1522
Abstract
The rule that the electron-hole-pair creation energy is 3 times the semiconductor band gap is extended to include a large group of insulators. It is used, together with the free-particle approximation, to describe cathodoluminescent phosphor efficiencies and the escape probabilities of secondary electrons.Keywords
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