Observation of Capacitance Hunching at the Flat-Band-Voltage in Boron-Doped Diamond Metal/Insulator/Semiconductor Structure

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Abstract
Metal/insulator ( CaF2)/semiconducting diamond (MIS) structures employing boron-doped homoepitaxial diamond films were prepared and their electrical properties were investigated. Al/ CaF2/diamond MIS diodes exhibited capacitance variation from accumulation to depletion values under the application of bias voltage from -4 to 4 V, and at the flat-band voltage, capacitance hunching always appeared in their capacitance-voltage ( C–V ) curves. These features coincide well with the prediction based on the theoretical analysis, and originate due to the presence of the deep boron level in the diamond energy gap.