Observation of gold levels in silicon by MOS capacitance measurements
- 31 August 1972
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (8) , 945-946
- https://doi.org/10.1016/0038-1101(72)90032-9
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- On the study of irradiated MOS structures at very low frequencySolid-State Electronics, 1972
- Electrical Properties of Gold at the Silicon-Dielectric InterfaceJournal of Applied Physics, 1971
- The equivalent circuit model in solid-state electronics—IIISolid-State Electronics, 1970
- Application of the distributed equilibrium equivalent circuit model to semiconductor junctionsIEEE Transactions on Electron Devices, 1969
- Hysteresis and gold in metal-insulator-semiconductor (MIS) capacitors†International Journal of Electronics, 1968
- The Effect of Gold on the Properties of the Si–SiO2 SystemJournal of Applied Physics, 1968
- Properties of Gold Doped MOS StructuresJournal of the Electrochemical Society, 1967