Competition between J = 1 and J = 2 exciton radiative transition in the low temperature range in N doped GaP and (Ga,In)P
- 30 November 1981
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 24-25, 397-400
- https://doi.org/10.1016/0022-2313(81)90297-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Anomalous Relative Enhancement of the Intensity of Phonon Sidebands in GaP:NPublished by Springer Nature ,1981
- Luminescence and direct experimental observations of band-structure effects in nitrogen-doped GaxIn1−xP alloysJournal of Applied Physics, 1977
- Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTePhysical Review B, 1967
- Isoelectronic Donors and AcceptorsPhysical Review Letters, 1966
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review Letters, 1965