Control of Surface Concentration in the Diffusion of Phosphorus in Silicon
- 1 May 1958
- journal article
- Published by Springer Nature in Nature
- Vol. 181 (4619) , 1331-1332
- https://doi.org/10.1038/1811331b0
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Rate Limitation at the Surface for Impurity Diffusion in SemiconductorsPhysical Review B, 1956
- Diffusion of Donor and Acceptor Elements in SiliconJournal of Applied Physics, 1956
- VAPOR PRESSURE OF WHITE PHOSPHORUS FROM 44° TO 150°.Journal of the American Chemical Society, 1921