Long minority hole diffusion length and evidence for bulk radiative recombination limited lifetime in InP/InGaAs/InP double heterostructures
- 16 May 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (20) , 1686-1688
- https://doi.org/10.1063/1.99019
Abstract
Minority hole diffusion length, lifetime, and mobility for undoped InGaAs were measured at 297 and 77 K in metalorganic chemical vapor deposited InP/InGaAs/InP double heterostructures using continuous-wave and pulsed optical beam induced current techniques. A hole diffusion length Lp=140 μm, a lifetime τp=18.5 μs, and a mobility μp=425 cm2/(V s) were obtained at room temperature. To the best of our knowledge, these properties are the highest reported values for InGaAs. The measured carrier lifetime and its temperature dependence are consistent with bulk radiative recombination in undoped InGaAs.Keywords
This publication has 6 references indexed in Scilit:
- Measurement of hole velocity in n-type InGaAsApplied Physics Letters, 1987
- Large-hole diffusion length and lifetime in InGaAs/InP double-heterostructure photodiodesElectronics Letters, 1986
- Peripheral electron-beam induced current response of a shallow p-n junctionJournal of Applied Physics, 1984
- Heterojunction Effect on Spectral and Frequency Responses in InP/InGaAsP/InGaAs APDJapanese Journal of Applied Physics, 1983
- Self-absorption effects on the radiative lifetime in GaAs-GaAlAs double heterostructuresJournal of Applied Physics, 1977
- Photon-Radiative Recombination of Electrons and Holes in GermaniumPhysical Review B, 1954