Profile Evolution in High-Dose Ion Implantation. A Computer Simulation Study
- 16 March 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 94 (1) , 365-370
- https://doi.org/10.1002/pssa.2210940146
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Computer studies of the reflection of light ions from solidsPublished by Elsevier ,2002
- Ranges of energetic ions in matterPhysical Review A, 1981
- Ranges and range theoriesRadiation Effects, 1980
- Low-energy antimony implantation in siliconRadiation Effects, 1980
- Monte-Carlo calculation of low energy ion collection in the presence of sputtering, range shortening, knock-on and diffusionRadiation Effects, 1980
- On dissimilarities of heavy ion ranges in aluminium and siliconPhysics Letters A, 1979
- Heavy ion ranges in aluminium and siliconRadiation Effects, 1978
- Range parameters of heavy ions in amorphous targets at LSS-energies of 0.0006⩽ ϵ ⩽ 0.3Physics Letters A, 1975
- Range parameter distortion in heavy ion implantationPhysics Letters A, 1975
- Computer simulation of atomic-displacement cascades in solids in the binary-collision approximationPhysical Review B, 1974