Range parameter distortion in heavy ion implantation
- 1 August 1975
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 54 (1) , 33-34
- https://doi.org/10.1016/0375-9601(75)90595-2
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Range parameters of heavy ions at 10 and 35 keV in siliconPhysics Letters A, 1975
- The measurement of Pb+ ion collection in Si by high depth-resolution Rutherford backscatteringPhysics Letters A, 1975
- Effects of inner shell excitation on the stopping power of solids for heavy ionsPhysics Letters A, 1974
- Electrical and backscattering measurements of arsenic implanted siliconApplied Physics A, 1974
- Back-scattering study of heavy-ion distribution in semiconductorsThin Solid Films, 1973
- Principles and applications of ion beam techniques for the analysis of solids and thin filmsThin Solid Films, 1973
- Range distribution of implanted ions in SiO2, Si3N4, and Al2O3Applied Physics Letters, 1973
- Stopping power of energetic helium ions transmitted through thin silicon crystals in channelling and random directionsRadiation Effects, 1972
- Sputtering and Strain of Silicon by Ion ImplantationJournal of Applied Physics, 1971
- RANGE OF ENERGETIC Xe125 IONS IN MONOCRYSTALLINE SILICONCanadian Journal of Physics, 1964