Sputtering and Strain of Silicon by Ion Implantation
- 1 January 1971
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (1) , 480-482
- https://doi.org/10.1063/1.1659630
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- LATTICE EXPANSION AND STRAIN IN ION-BOMBARDED GaAs AND SIApplied Physics Letters, 1970
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969
- X‐Ray Investigation of Lattice Deformations in Silicon Induced through High‐Energy Ion ImplantationPhysica Status Solidi (b), 1969
- Sputtering and depth-distribution phenomena in KCl, Al2O3, and TiO2Canadian Journal of Physics, 1968
- Sputtering Experiments with 1- to 5-keV Ar+ IonsJournal of Applied Physics, 1963
- Surface Cleaning by Cathode SputteringJournal of Applied Physics, 1960