Structure of ionized cluster beam aluminum deposited on (100) silicon

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Abstract
Ionized cluster beam aluminum deposited on (100) silicon has a unique grain structure consisting of only two crystallographic orientations. Both are (110), but are rotated 90° with respect to each other about the (110) axis so that their (220) planes are perpendicular. This structure arises from a close match between the (200) planes in the aluminum and the (220) planes in the silicon along one direction, and the existence of a interfacial superlattice consisting of three (220) planes from the silicon and four (220) planes from the aluminum, along the orthogonal direction. This grain structure contains no triple points and curved grain boundaries.